Search for dissertations about: "cryogenic temperatures"

Showing result 6 - 10 of 48 swedish dissertations containing the words cryogenic temperatures.

  2. 6. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE

  4. 7. EPR Studies of Photosystem II : Characterizing Water Oxidizing Intermediates at Cryogenic Temperatures

    Author : Kajsa G.V. Havelius; Stenbjörn Styring; Holger Dau; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Biochemistry; Biokemi;

    Abstract : The principles of natures own light-driven water splitting catalyst, Photosystem II (PSII), can in the future inspire us to use water as electron and proton source to generate light-driven H2 production. To mimic this challenging step, it is important to understand how the enzyme system can oxidize water. READ MORE

  5. 8. InGaAs Nanowire and Quantum Well Devices

    Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

  6. 9. III-V Devices for Emerging Electronic Applications

    Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

    Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE

  7. 10. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE