Search for dissertations about: "cryogenic transistor"

Showing result 1 - 5 of 16 swedish dissertations containing the words cryogenic transistor.

2. 1. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

   Author : Eunjung Cha; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

   Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. READ MORE

4. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE

5. 3. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

   Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE

6. 4. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

   Author : Eunjung Cha; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

   Abstract : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. READ MORE

7. 5. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

   Author : Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

   Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. READ MORE