Search for dissertations about: "cryogenic"

Showing result 1 - 5 of 103 swedish dissertations containing the word cryogenic.

  1. 1. Cryogenic low noise amplifiers for microwave frequencies

    Author : Jianguo Xu; Chalmers University of Technology; []
    Keywords : MODFET; cryogenic; millimeter-wave; low-noise amplifier; FET noise model; microwave; TEGFET; HEMT; noise measurement; HFET; computer-aided design;

    Abstract : .... READ MORE

  2. 2. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Author : Joel Schleeh; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE

  3. 3. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE

  4. 4. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Author : Joel Schleeh; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE

  5. 5. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

    Author : Isabel Harrysson Rodrigues; Chalmers University of Technology; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. READ MORE