Search for dissertations about: "current gain"

Showing result 6 - 10 of 457 swedish dissertations containing the words current gain.

  2. 6. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Author : Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE

  4. 7. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Author : Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE

  5. 8. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits

    Author : Luigia Lanni; Zetterling Carl-Mikael; Sei-Hyung Ryu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; current gain; surface passivation; SiC etching; complementary bipolar; lateral PNP; Darlington transistors; SPICE modeling; high-temperature; integrated circuits; emitter coupled logic ECL ;

    Abstract : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. READ MORE

  6. 9. High power bipolar junction transistors in silicon carbide

    Author : Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

    Abstract : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. READ MORE

  7. 10. Quantitative Modeling of Gain in Quantum Cascade Lasers under Operational Intensities

    Author : David Winge; Matematisk fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; non-linear response; quantum cascade lasers; modelling; Non-equilibrium Green s functions; Gain clamping; Fysicumarkivet A:2016:Winge; kvantkaskadlaser; terahertz; infrarött; Halvledarfysik; spektroskopi; simulering;

    Abstract : This thesis adresses modeling of quantum cascade lasers using non-equilibrium Green’s functions. Focus lies on the quantitative modeling of the gain when the systems are exposed to strong laser fields, as under realistic opertional conditions. READ MORE