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Showing result 1 - 5 of 22 swedish dissertations matching the above criteria.
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1. Epitaxy of GaAs-based long-wavelength vertical cavity lasers
Abstract : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. READ MORE
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2. Processing technologies for long-wavelength vertical-cavity lasers
Abstract : Vertical-cavity surface-emitting lasers (VCSELs) areattractive as potential inexpensive high-performance emittersfor fibre-optical communication systems. Their surface-normalemission together with the small dimensions are beneficial forlow-cost fabrication since it allows on-wafer testing,simplified packaging and effective fibre-coupling. READ MORE
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3. InP based Micromechanics for Vertical-Cavity Micro-Opto-Electro-Mechanical Systems
Abstract : During the past decade, the amount of transmitted data hasbeen boosted due to an increasing use of the World Wide Web(WWW), video and audio transmissions. In the late 90s, thetraditional technology using twisted copper cables was nolonger capable to provide enough transmission capacity for theconstantly increasing data traffic. READ MORE
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4. Long-Wavelength Vertical-Cavity Lasers : Materials and Device Analysis
Abstract : Vertical-cavity lasers (VCLs) are of great interest as lightsources for fiber-optic communication systems. Such deviceshave a number of advantages over traditional in-plane laserdiodes, including low power consumption, efficient fibercoupling, on-chip testability, as well as potential low-costfabrication and packaging. READ MORE
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5. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy
Abstract : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. READ MORE