Search for dissertations about: "deep electron traps"

Showing result 1 - 5 of 10 swedish dissertations containing the words deep electron traps.

  2. 1. Preparation and electrical characterization of silicon structures formed by wafer bonding

    Author : Stefan Bengtsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si-Si interfaces; hydrophobic surface; electro-optical studies; deep electron traps;

    Abstract : .... READ MORE

  4. 2. Detection and removal of traps at the SiO2/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  5. 3. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material

    Author : Carl Hemmingsson; Gerhard Pensl; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. READ MORE

  6. 4. Advanced III-Nitride Technology for mm-Wave Applications

    Author : Anna Malmros; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Abstract : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. READ MORE

  7. 5. Electronic properties of intrinsic defects and impurities in GaN

    Author : Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE