Search for dissertations about: "deep level spectroscopy"

Showing result 1 - 5 of 30 swedish dissertations containing the words deep level spectroscopy.

  1. 1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

    Author : Denny Åberg; KTH; []
    Keywords : capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

    Abstract : .... READ MORE

  2. 2. Optical Characterization of Deep Level Defects in SiC

    Author : Andreas Gällström; Erik Janzén; Ivan Ivanov; Jörg Weber; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon Carbide (SiC) has long been considered a promising semiconductor material for high power devices, and has also recently found to be one of the emergent materials for quantum computing. Important for these applications are both the quality and purity of the crystal. READ MORE

  3. 3. Deep levels in SiC

    Author : Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE

  4. 4. Carrier Lifetime Relevant Deep Levels in SiC

    Author : Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE

  5. 5. Optical Studies of InAs Quantum Dots in III-V Semiconductors

    Author : Lars Landin; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

    Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE