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Showing result 1 - 5 of 29 swedish dissertations matching the above criteria.
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1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Abstract : .... READ MORE
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2. Optical Characterization of Deep Level Defects in SiC
Abstract : Silicon Carbide (SiC) has long been considered a promising semiconductor material for high power devices, and has also recently found to be one of the emergent materials for quantum computing. Important for these applications are both the quality and purity of the crystal. READ MORE
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3. Deep levels in SiC
Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE
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4. Carrier Lifetime Relevant Deep Levels in SiC
Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE
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5. Optical Studies of InAs Quantum Dots in III-V Semiconductors
Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE