Search for dissertations about: "deep level transient spectroscopy"
Showing result 1 - 5 of 19 swedish dissertations containing the words deep level transient spectroscopy.
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1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Abstract : .... READ MORE
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2. Growth and characterization of SiC and GaN
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
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3. Optical Studies of InAs Quantum Dots in III-V Semiconductors
Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE
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4. Deep levels in SiC
Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE
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5. Carrier Lifetime Relevant Deep Levels in SiC
Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE