Search for dissertations about: "deep level transient spectroscopy"
Showing result 16 - 19 of 19 swedish dissertations containing the words deep level transient spectroscopy.
-
16. Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC
Abstract : Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. READ MORE
-
17. Electronic properties of intrinsic defects and impurities in GaN
Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE
-
18. Electron paramagnetic resonance study of defects in SiC
Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. READ MORE
-
19. Device characteristics of sublimation grown 4H-SiC layers
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
