Search for dissertations about: "deep-ultraviolet"
Showing result 1 - 5 of 17 swedish dissertations containing the word deep-ultraviolet.
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1. Elements of AlGaN-Based Light Emitters
Abstract : The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be explored. READ MORE
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2. Towards Novel AlGaN-Based Light Emitters
Abstract : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. READ MORE
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3. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Abstract : .... READ MORE
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4. Doping of high-Al-content AlGaN grown by MOCVD
Abstract : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. READ MORE
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5. Localization effects in ternary nitride semiconductors
Abstract : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. READ MORE