Search for dissertations about: "diffusion band gap"
Showing result 1 - 5 of 27 swedish dissertations containing the words diffusion band gap.
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1. Epitaxial growth of semiconductor nanowires
Abstract : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. READ MORE
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2. Electronic Structure Calculations of Point Defects in Semiconductors
Abstract : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. READ MORE
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3. Modelling Band Gap Gradients and Cd-free Buffer Layers in Cu(In,Ga)Se2 Solar Cells
Abstract : A deeper understanding of Cu(In,Ga)Se2 (CIGS) solar cells is important for the further improvement of these devices. This thesis is focused on the use of electrical modelling as a tool for pursuing this aim. Finished devices and individual layers are characterized and the acquired data are used as input in the simulations. READ MORE
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4. Silicon Carbide Microwave Devices
Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE
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5. Fabrication and Characterization of Si-on-SiC Hybrid Substrates
Abstract : In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic wafer bonding, we have achieved silicon on crystalline silicon carbide for the first time and silicon on polycrystalline silicon carbide substrates at 150 mm wafer size. READ MORE