Search for dissertations about: "doping sic"
Showing result 1 - 5 of 45 swedish dissertations containing the words doping sic.
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1. Growth and characterization of SiC and GaN
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
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2. Fluorinated SiC CVD
Abstract : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. READ MORE
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3. CVD solutions for new directions in SiC and GaN epitaxy
Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE
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4. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers
Abstract : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. READ MORE
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5. Deep levels in SiC
Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE