Search for dissertations about: "drain bias"

Showing result 1 - 5 of 26 swedish dissertations containing the words drain bias.

  2. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  4. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE

  5. 3. Design and Characterization of RF-Power LDMOS Transistors

    Author : Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

    Abstract : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. READ MORE

  6. 4. Polyelectrolyte-Gated Organic Field Effect Transistors – Printing and Electrical Stability

    Author : Hiam Sinno; Magnus Berggren; Isak Engquist; Jan Linnros; Linköpings universitet; []
    Keywords : ;

    Abstract : The progress in materials science during recent decades along with the steadily growing desire to accomplish novel functionalities in electronic devices and the continuous strive to achieve a more efficient manufacturing process such as low‐cost robust high‐volume printing techniques, has brought the organic electronics field to light. For example, organic field effect transistors (OFETs) are the fundamental building blocks of flexible electronics. READ MORE

  7. 5. Integrated VCOs in Gallium Arsenide HEMT technologies with a novel varactor structure

    Author : Mattias Ferndahl; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; design; Oscillator; HEMT; pHEMT; MMIC; VCO; varactor; GaAs; mHEMT;

    Abstract : This thesis presents results on metamorphic and pseudomorpic GaAs HEMT based Voltage Controlled Oscillators and a novel high-Q varactor structure, used in the VCOs, together with a straightforward extraction procedure for the varactors.Theory and fundamentals around LC-oscillators with oscillator criteria, phase noise and different topologies are given as background together with VCO phase noise measurement methods and an overview on device flicker noise; its physical origin and measurement. READ MORE