Search for dissertations about: "electron effective-mass"
Showing result 1 - 5 of 11 swedish dissertations containing the words electron effective-mass.
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1. Electron Transport and Charge Control in Epitaxial Graphene
Abstract : Graphene monolayers and bilayers have attracted research interest in both the physics and electronic materials communities owing to their unique band structures. In a pristine monolayer, carriers travel at the Fermi velocity v_f = 1e8 cm/s and exhibit linear dispersion. READ MORE
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2. Effect of Substrate on Bottom-Up Fabrication and Electronic Properties of Graphene Nanoribbons
Abstract : Taking into account the technological demand for the controlled preparation of atomically precise graphene nanoribbons (GNRs) with well-defined properties, the present thesis is focused on the investigation of the role of the underlying metal substrate in the process of building GNRs using bottom-up strategy and on the changes in the electronic structure of GNRs induced by the GNR-metal interaction. The combination of surface sensitive synchrotron-radiation-based spectroscopic techniques and scanning tunneling microscopy with in situ sample preparation allowed to trace evolution of the structural and electronic properties of the investigated systems. READ MORE
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3. Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect
Abstract : Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE
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4. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect
Abstract : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE
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5. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy
Abstract : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. READ MORE