Search for dissertations about: "electronic properties of QW"

Showing result 1 - 5 of 7 swedish dissertations containing the words electronic properties of QW.

  2. 1. Electrical and Optical Properties of AlGaAs/GaAs Aperiodic Superlattices and Resonant Tunneling Diodes. Theory, Design and Applications

    Author : Simon Mang Cao; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; exciton-assisted transport; miniband; high-speed quantum electronics; optical properties; ultrafast optoelectronics; field-induced transport; irregular superlattices; nanometer-scale heterostructures; laser diodes; resonant tunneling;

    Abstract : The objective of the work presented in this thesis is to study quantum transport and optical properties of aperiodic superlattices and resonant tunneling diodes using III-V semiconductor heterostructures grown by molecular beam epitaxy. The study follows a procedure of theoretical modeling, computer-aided design and simulation, sample growth, and measurements. READ MORE

  4. 2. Photoluminescence studies of the electronic structure in some III-V quantum structures

    Author : Joakim Dalfors; Jacques Pankove; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Semiconductor compound materials from groups III and V in the periodic table have attracted much interest during recent years, due to promising properties for optoelectronic devices such as lasers and light emitting diodes. Most of these devices are fabricated from quantum well (QW) structures. READ MORE

  5. 3. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

    Author : Göran Adolfsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; single mode laser; transfer matrix method; threshold current; InGaAs; GaAs; multiple quantum wells; dilute nitrides; two-color laser; GaInNAs; Semiconductor lasers; molecular beam epitaxy; characteristic temperature; temperature dependence; ambipolar diusion; Fabry-Perot resonator; spectral engineering;

    Abstract : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). READ MORE

  6. 4. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Author : Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Abstract : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. READ MORE

  7. 5. Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors

    Author : Linda Höglund; Per-Olof Holtz; Mattias Hammar; Stefan Johansson; Sanjay Krishna; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : This thesis presents results from the development of quantum dot (QD) based infrared photodetectors (IPs). The studies include epitaxial growth of QDs, investigations of the structural, optical and electronic properties of QD-based material as well as characterisation of the resulting components. READ MORE