Search for dissertations about: "epitaxial layers"

Showing result 1 - 5 of 138 swedish dissertations containing the words epitaxial layers.

  2. 1. Cathodoluminescence studies of III-V epitaxial layers

    Author : Anders Gustafsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:1991:Gustafsson;

    Abstract : [abstract missing].... READ MORE

  4. 2. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE

  5. 3. Local fields at impurity atoms in single crystals and epitaxial layers

    Author : Michael R. Semple; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : .... READ MORE

  6. 4. Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

    Author : Milan Yazdanfar; Erik Janzén; Olle Kordina; Henrik Pedersen; Stephen Saddow; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon carbide (SiC) is a very hard semiconductor material with wide band gap, high breakdown electric field strength, high thermal conductivity and high saturation electron drift velocity making it a promising material for high frequency and high power devices. The performance of electrical devices is strongly dependent on the quality, doping level and thickness of the grown epitaxial layers. READ MORE

  7. 5. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

    Author : Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. READ MORE