Search for dissertations about: "field-effect transistors"

Showing result 1 - 5 of 116 swedish dissertations containing the words field-effect transistors.

  1. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Author : Niklas Rorsman; Chalmers University of Technology; []
    Keywords : subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

    Abstract : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. READ MORE

  2. 2. Polarization characteristics in polyelectrolyte thin film capacitors : Targeting field-effect transistors and sensors

    Author : Oscar Larsson; Xavier Crispin; Magnus Berggren; Nathaniel Robinson; Ludvig Edman; Linköpings universitet; []

    Abstract : Polymers are very attractive materials that can be tailored for specific needs and functionality. They can for instance be made electrically insulating or (semi)conducting, with specific mechanical properties. Polymers are often processable from a solution, which enables the use of low-cost manufacturing techniques to fabricate polymer devices. READ MORE

  3. 3. Graphene field-effect transistors and devices for advanced high-frequency applications

    Author : Marlene Bonmann; Chalmers University of Technology; []
    Keywords : traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

    Abstract : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. READ MORE

  4. 4. Effects of impurities on charge transport in graphene field-effect transistors

    Author : Marlene Bonmann; Chalmers University of Technology; []
    Keywords : carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

    Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE

  5. 5. Electronic Sensors Based on Nanostructured Field-Effect Devices

    Author : Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

    Abstract : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. READ MORE