Search for dissertations about: "forward voltage drop"
Found 5 swedish dissertations containing the words forward voltage drop.
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1. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE
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2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE
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3. Design, Processing and Characterization of Silicon Carbide Diodes
Abstract : Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3. READ MORE
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4. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence
Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. READ MORE
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5. Epitaxial Growth and Characterization of SiC for High Power Devices
Abstract : Silicon Carbide (SiC) is a semiconductor with a set of superior properties, including wide bandgap, high thermal conductivity, high critical electric field and high electron mobility. This makes it an excellent material for unipolar and bipolar electronic device applications that can operate under high temperature and high power conditions. READ MORE