Search for dissertations about: "germanium oxide"

Showing result 1 - 5 of 15 swedish dissertations containing the words germanium oxide.

  2. 1. Ge/high-k Gates for Monolithic 3D Integration

    Author : Laura Zurauskaite; Per-Erik Hellström; Mikael Östling; Francois Andrieu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Germanium; high-k; monolithic; 3D; germanium on insulator; GOI; germanium oxide; GeOx; Si-cap; Si-passivation; interface state density; Dit; low temperature; MOSFET; germanium; hög-permittivitetsdielektrika; monolitisk; 3D; germaniumpå- isolator; GOI; germaniumoxid; GeOx; kiselskikt; kiselpassivering; gränssnittsfälltäthet; Dit; låg temperatur; MOSFET; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. READ MORE

  4. 2. Germanium layer transfer and device fabrication for monolithic 3D integration

    Author : Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

    Abstract : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. READ MORE

  5. 3. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

    Author : Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE

  6. 4. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    Author : Johan Pejnefors; KTH; []
    Keywords : chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE

  7. 5. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Author : Erik Haralson; KTH; []
    Keywords : Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE