Search for dissertations about: "group-III nitrides"

Showing result 1 - 5 of 10 swedish dissertations containing the words group-III nitrides.

  1. 1. Hot-wall MOCVD of N-polar group-III nitride materials

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  2. 2. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers University of Technology; []
    Keywords : AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  3. 3. Strain-related structural and vibrational properties of group-III nitride layers and superlattices

    Author : Vanya Darakchieva; Oliver Ambacher; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : This PhD thesis is focused on strain-related phenomena in group-III nitride layers and heterostructures. Key issues in material properties as phonon mode behavior, structure and lattice parameters of AlN, InN and GaN, as well as of AlN/GaN superlattices are addressed in order to give answers to some open questions. READ MORE

  4. 4. Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect

    Author : Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Stefan Zollner; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES;

    Abstract : Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE

  5. 5. Optically detected magnetic resonance studies of intrinsic defects in dilute nitrides and SiC

    Author : Nguyen Quoc Thinh; Marek Godlewski; Poland Warsaw Polish Academy of Science Institute of Physics; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Self-interstitials, vacancies and antisites belong to an important class of defects -intrinsic defects - in compound semiconductors. They have been found to be common occurring defects in semiconductor crystals grown under non-optimized or non-equilibrium conditions or subject to high-energy particle bombardment. READ MORE