Search for dissertations about: "halvledare"

Showing result 1 - 5 of 46 swedish dissertations containing the word halvledare.

  1. 1. Study of GaN Based Nanostructures and Hybrids

    Author : Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

    Abstract : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. READ MORE

  2. 2. Electronic Structure Calculations of Point Defects in Semiconductors

    Author : Andreas Höglund; Susanne Mirbt; Alison Mainwood; Uppsala universitet; []
    Keywords : Physics; electronic structure calculations; point defects; semiconductor; formation energy; equilibrium solubility limit; thermodynamic equilibrium concentration; transfer levels; negative-U; 110 surface; diffusion; activation energy; solar cells; Fysik;

    Abstract : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. READ MORE

  3. 3. Optical spectroscopy of InGaAs quantum dots

    Author : Arvid Larsson; Per Olof Holtz; Artur Zrenner; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; quantum dot; semiconductor; optical properties; spin; transport; wetting layer; polarization; kvantprick; halvledare; optiska egenskaper; spin; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Materials science; Teknisk materialvetenskap; Condensed matter physics; Kondenserade materiens fysik; Semiconductor physics; Halvledarfysik;

    Abstract : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. READ MORE

  4. 4. Advanced Nanostructured Transition Metal Oxide Semiconductors for Solar Energy Applications

    Author : Pedram Ghamgosar; Alberto Vomiero; Nils Almqvist; Federica Rigoni; Mauro Salvatore Epifani; Luleå tekniska universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Metal Oxide; Photovoltaic; Semiconductors; Self-powered photodetectors; Photoelectrochemical cell; Solar fuel; Water splitting; Experimentell fysik; Experimental Physics;

    Abstract : Increasing energy consumption and its environmental impacts make it necessary to look for alternative energy sources. Solar energy as huge energy source that can cover the terms sustainability is considered as a favorable alternative. READ MORE

  5. 5. Novel Processing and Electrical Characterization of Nanowires

    Author : Kristian Storm; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Gate; Capacitance; Hall effect; InP; InAs; Characterization; Nanowires; Processing; LED; Transistor; Fysicumarkivet A:2013:Storm;

    Abstract : This thesis investigates novel electrical nanowire characterization tools and devices. Conventional characterization methods, long available to bulk semiconductor samples, have been adapted and transferred to the nanowire geometry. READ MORE