Search for dissertations about: "hbts"

Showing result 1 - 5 of 10 swedish dissertations containing the word hbts.

  2. 1. Ultra High Speed InP Heterojunction Bipolar Transistors

    Author : Mattias Dahlström; KTH; []
    Keywords : InP HBT carbon high-speed;

    Abstract : This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm2, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization. READ MORE

  4. 2. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Author : Erik Danielsson; KTH; []
    Keywords : silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE

  5. 3. Large-Signal Modeling of Microwave Transistors

    Author : Lars Bengtsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

    Abstract : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. READ MORE

  6. 4. Oscillator design in III-V technologies

    Author : Szhau Lai; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; InGaP HBT; device model; mixer; Darlington pair; GaN HEMT; simulation; varactor; phase noise; CAD; switch mode.; VCO; Colpitts oscillator; low frequency noise;

    Abstract : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. READ MORE

  7. 5. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Author : Joel Schleeh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE