Search for dissertations about: "heterodyne receiver"

Showing result 1 - 5 of 17 swedish dissertations containing the words heterodyne receiver.

  1. 1. NbN and NbTiN Hot Electron Bolometer THz Mixers

    Author : Pourya Khosropanah; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; receiver noise; hot electron bolometer; superconducting detector; spiral antenna; NbTiN; submillimeter mixer; THz mixer; HEB; FTS; NbN; quasioptical receiver; heterodyne receiver; double slot antenna; twin slot antenna; Fourier Transform Spectrometer;

    Abstract : The thesis reports the development of Hot Electron Bolometer (HEB) mixers for radio astronomy heterodyne receivers in THz frequency range. Part of this work is the fabrication of HEB devices, which are based on NbN or NbTiN superconducting thin films (≤5 nm). They are integrated with wideband spiral or double-slot planar antennas. READ MORE

  2. 2. Advanced Schottky Diode Receiver Front-Ends for Terahertz Applications

    Author : Peter Sobis; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; terahertz electronics; TRL-calibration; frequency converters; down converters; phase shifters; S-parameter measurements; Schottky diodes; subharmonic mixers; radiometers; terahertz technology; submillimetre wave technology; heterodyne receivers; differential phase shifters; sideband separating mixers;

    Abstract : This thesis treats the development of high frequency circuits for increased functionality of terahertz receiver front-ends based on room temperature Schottky diode technology. This includes the study of novel circuit integration schemes, packaging concepts as well as new measurement and characterisation techniques. READ MORE

  3. 3. Millimeter-wave Transceiver ICs for Ultrahigh Data Rate Communications Using Advanced III-V and Silicon Technologies

    Author : Sona Carpenter; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; D-band; frequency multiplier; 110-170 GHz; QPSK; demodulator; I Q modulator; transmitter; high-order modulation; receiver; high data rate; single chip; SiGe BiCMOS; QAM; InP DHBT; direct conversion; Gilbert-cell mixer; millimeter-wave communication; 5G; MMIC; point-to-point radio.;

    Abstract : Today’s main driving parameter for radio transceiver research is the ability to provide high capacity while maintaining low cost, small form factor, and low power consumption. Direct conversion architectures (due to the feasibility of monolithic integration) at millimeter-wave (due to wideband availability) have attracted large interest in recent years because of their potential to meet these demands. READ MORE

  4. 4. Antenna Integrated Superconducting Mixers

    Author : Hans Ekström; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; tapered slotline antenna; mixer; double dipole antenna; superconducting; hot electron; receiver; Niobium; bolometer; trilayer junction; edge junction; Niobium Nitride; SIS;

    Abstract : This thesis investigates the prospects of some different superconducting mixers integrated with planar antennas for the millimeter and submillimeter regime. Two kinds of Superconductor/Insulator/Superconductor (SIS) tunnel junctions for use in mixers have been fabricated; Nb/PbBi edge junctions and Nb trilayer junctions. READ MORE

  5. 5. NbN Hot Electron Bolometric Mixers for a Quasi--Optical THz Receiver

    Author : Matthias Kroug; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; bolometric mixer; superconducting NbN; heterodyne detection; hot electron effect; quasi-optical;

    Abstract : Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. READ MORE