Search for dissertations about: "heteroepitaxy of GaN"
Found 5 swedish dissertations containing the words heteroepitaxy of GaN.
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1. Gallium nitride templates and its related materials for electronic and photonic devices
Abstract : .... READ MORE
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2. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices
Abstract : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. READ MORE
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3. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy
Abstract : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. READ MORE
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4. Structural and elastic properties of InN and InAlN with different surface orientations and doping
Abstract : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. READ MORE
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5. Junction Engineering in Nanostructured Optoelectronic Devices
Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE