Search for dissertations about: "heteroepitaxy"

Showing result 1 - 5 of 11 swedish dissertations containing the word heteroepitaxy.

  2. 1. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices

    Author : Maryam Khalilian; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-Nitride materials; heteroepitaxy; 3D growth mode; optoelectronic devices; Fysicumarkivet A:2019:Khalilian;

    Abstract : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. READ MORE

  4. 2. Interactions of molecules and solids within the density-functional theory

    Author : Ylva Andersson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; exchange-correlation energy; heteroepitaxy; effective-medium theory; van der Waals interactions; total energy; density-functional theory;

    Abstract : .... READ MORE

  5. 3. Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy

    Author : Yanting Sun; KTH; []
    Keywords : electronics; electrical; material science;

    Abstract : Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed. READ MORE

  6. 4. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration

    Author : Fredrik Olsson; Sebastian Lourdudoss; Shigeya Naritsuka; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor Physics; Semiconductor physics; Halvledarfysik;

    Abstract : A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. READ MORE

  7. 5. Gallium nitride templates and its related materials for electronic and photonic devices

    Author : Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Abstract :  .... READ MORE