Search for dissertations about: "heterojunction diode"

Showing result 1 - 5 of 11 swedish dissertations containing the words heterojunction diode.

  2. 1. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Author : Erik Danielsson; KTH; []
    Keywords : silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE

  4. 2. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

    Author : Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

    Abstract : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. READ MORE

  5. 3. Heterostructure Diodes for Millimeter Wave Power Generation

    Author : Hans Grönqvist; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Single barrier varactor diode; AlSb barrier; InAs substrate; high frequencies; Resonant Tunneling Diode;

    Abstract : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. READ MORE

  6. 4. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    Author : Mattias Borg; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg;

    Abstract : Abstract in UndeterminedThis thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. READ MORE

  7. 5. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization

    Author : Xulu Zeng; Fasta tillståndets fysik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; GaInP; InP; tandem; tunnel diode; solar cell;

    Abstract : Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even higher efficiency. However, extensive studies are needed to reach this goal. READ MORE