Search for dissertations about: "heterojunction"
Showing result 21 - 25 of 76 swedish dissertations containing the word heterojunction.
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21. Impact of Glass Formation on the Thermal Stability of Non-Fullerene Solar Cells
Abstract : The world is facing immense challenges such as climate change and the depletion of non-renewable resources, making renewable sources of energy essential for a sustainable future. Organic solar cells are emerging as a promising technology; however, their stability requires significant improvement. READ MORE
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22. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
Abstract : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. READ MORE
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23. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors
Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE
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24. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE
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25. Processing, Characterization and Modeling of AlGaN/GaN HEMTs
Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE