Search for dissertations about: "high blocking voltage"
Showing result 6 - 10 of 16 swedish dissertations containing the words high blocking voltage.
-
6. Growth and characterization of SiC and GaN
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
-
7. On Design of a Compact Primary Switched Conversion System for Electric Railway Propulsion
Abstract : In this thesis, a compact and light primary switched conversion system for AC-fed railway propulsion is investigated. It is characterized by soft switching of all converter stages and a source commutated primary converter comprising series connected valves. READ MORE
-
8. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE
-
9. Device characteristics of sublimation grown 4H-SiC layers
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
-
10. CVD growth and material quality control of silicon carbide
Abstract : SiC has emerged as a promising semiconductor to replace Si in high power, high frequency and high temperature electronics. Thanks 1to the advantageous intrinsic material properties, such as large band gap, high electric breakdown field, high thermal conductivity and highly inert chemical properties, intensified efforts world-wide have been attracted in developing crystal growth technology and device fabrication processes for the SiC components. READ MORE