Search for dissertations about: "high electron mobility transistor"

Showing result 1 - 5 of 50 swedish dissertations containing the words high electron mobility transistor.

2. 1. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

   Author : Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

   Abstract : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). READ MORE

4. 2. MOCVD growth of GaN-based high electron mobility transistor structures

   Author : Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. READ MORE

5. 3. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

   Author : Eunjung Cha; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

   Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. READ MORE

6. 4. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

   Author : Eunjung Cha; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

   Abstract : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. READ MORE

7. 5. Diamond Devices Based on Valley Polarization

   Author : Nattakarn Suntornwipat; Jan Isberg; Markus Gabrysch; Saman Majdi; Hitoshi Umezawa; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CVD diamond; valleytronics; Negative Differential Mobility; NDM; electron polarization; Time-of-Flight; magnetotransport; carrier transport; drift velocity; valley-transistor; Transferred-Electron Oscillator; TEO; TED; Gunn diode;

   Abstract : Diamond is a wide bandgap semiconductor with extreme properties such as high thermal conductivity, high breakdown field, high carrier mobilities and chemical inertness. These properties together with the possibility to synthesize high purity Single-Crystalline (SC) diamond by Chemical Vapor Deposition (CVD), make it a very interesting material and a candidate for use in power electronics and in hazardous environments. READ MORE