Search for dissertations about: "high frequency behavior of mos transistor"

Found 4 swedish dissertations containing the words high frequency behavior of mos transistor.

  1. 1. High Frequency Analysis of Silicon RF MOS Transistors

    Author : Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Abstract : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. READ MORE

  2. 2. Design and Modeling of High-Frequency LDMOS Transistors

    Author : Lars Vestling; Andrej Litwin; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Abstract : The lateral double-diffused MOS (LDMOS) transistor has traditionally been a high-voltage device used in switching applications. The use as a high-frequency device has become more important lately since the LDMOS offers an low cost solution for telecommunication applications. READ MORE

  3. 3. Silicon device substrate and channel characteristics influenced by interface properties

    Author : Mikael Johansson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Abstract : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. READ MORE

  4. 4. Reactors - Circuit Theory and Silicon Integrated Applications

    Author : Pietro Andreani; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Active Filters; Delay Lines; VCOs; Inductors; Circuit Theory; Capacitors; CMOS; Electronics; Elektronik;

    Abstract : This dissertation deals with reactive components in electric circuits, both as targets for a theoretical circuit analysis, and as devices implemented in silicon processes like CMOS. The frequency behavior of a general electric network is determined by the reactances (i.e. READ MORE