Search for dissertations about: "high frequency method"

Showing result 1 - 5 of 798 swedish dissertations containing the words high frequency method.

1. Vertical Nanowire High-Frequency Transistors

Author : Sofia Johansson; NanoLund: Centre for Nanoscience; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

Abstract : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. READ MORE
2. Alternative electronic packaging concepts for high frequency electronics

Author : Wolfgang Peter Siebert; Sture Petersson; Shaofang Gong; KTH; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; Connector; cooling; electronic; elastomer interconnect; EMC; shielded enclosure; high frequency; PCB; PWB; reverberation chamber; seams; soldering; twisted pair cable; Elektroteknik; Electrical engineering; Elektroteknik;

Abstract : The aim of the research work presented here, is to contribute to the adaptation of electronic packaging towards the needs of high frequency applications. As the field of electronic packaging stretches over several very different professional areas, it takes an interdisciplinary approach to optimize the technology of electronic packaging. READ MORE
3. High frequency electronic packaging and components : characterization, simulation, materials and processing

Author : Christian Johansson; Mats Robertsson; Li-Rong Zheng; Linköpings universitet; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Dielectric loss; high frequency electrical characterization; microwave circuits; multilayer thin film technology; ORMOCER®; permittivity; printed diode; sequential build-up; silicone elastomer; Signal processing; Signalbehandling;

Abstract : Electronic packaging continues to move towards improved performance and lower cost. Requirements of higher performance, reduced size, weight and cost of both high density interconnects and high frequency devices have led to the search for new materials, material combinations, methods, processes and production equipment. READ MORE
4. Silicon nanowire based devices for More than Moore Applications

Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE
5. A High Frequency Transformer Winding Model for FRA Applications

Author : Hanif Tavakoli; Göran Engdahl; Jonas Ekman; KTH; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; complex permeability; frequency response analysis; time domain reflectometry; high frequency modeling; transformer diagnosis; Electrical engineering; Elektroteknik;

Abstract : Frequency response analysis (FRA) is a method which is used to detect mechanical faults in transformers. The FRA response of a transformer is determined by its geometry and material properties, and it can be considered as the transformer’s fingerprint. READ MORE

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