Search for dissertations about: "high frequency performance"
Showing result 1 - 5 of 716 swedish dissertations containing the words high frequency performance.
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1. Low frequency noise during work. Effects on performance and annoyance
Abstract : Aims. Low frequency noise (LFN) is defined as "a noise with a dominant frequency content of 20 to 200 Hz". Common sources of LFN in occupational environments are ventilation, heating and air-conditioning systems, computer network installations and compressors. READ MORE
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2. Graphene field-effect transistors for high frequency applications
Abstract : Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. READ MORE
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3. High frequency electronic packaging : SBU-materials, material characterization, simulation and processing
Abstract : Electronic packaging continues to move towards improved performance and lower cost. Requirements of higher performance, reduced size, weight and cost of both High Density Interconnects (HDI) and high frequency (HF) devices has led to the search for new: materials, material combinations, methods, processes and production equipment. READ MORE
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4. Flip chip for high frequency applications : materials aspects
Abstract : Flip chip has since decades been the primary choice for chip interconnect for high performance circuits. Over the last few years, interest from the microwave arena has increased, and at this point in time microwave flip chip is a possible option for volume production. READ MORE
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5. Impact of adjacent dielectrics on the high-frequency performance of graphene field-effect transistors
Abstract : Transistors operating at high frequencies are the basic building blocks of millimeter wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open ways for development of ultra-fast group IV transistors with similar or even better performance than that achieved with III-V based semiconductors. READ MORE