Search for dissertations about: "high-k"

Showing result 1 - 5 of 43 swedish dissertations containing the word high-k.

  1. 1. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Jun Wu; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  2. 2. Electron states in high-k dielectric/silicon structures

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Bahman Raeissi; [2008]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOS; electron states; High-k dielectrics;

    Abstract : .... READ MORE

  3. 3. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE

  4. 4. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; [2014]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE

  5. 5. Horizontal Slot Waveguides for Silicon Photonics Back-End Integration

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Maziar A. M. Naiini; Mikael Östling; Jörge Schulze; [2014]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon photonics; slot waveguides; grating couplers; CMOS tech- nology; high-k; ALD; germanium photodetectors; graphene photodetectors; pho- tonic integrated circuits;

    Abstract : This thesis presents the development of integrated silicon photonic devices. These devices are compatible with the present and near future CMOS technology. High-khorizontal grating couplers and waveguides are proposed. READ MORE