Search for dissertations about: "high-power microwave devices"

Showing result 1 - 5 of 15 swedish dissertations containing the words high-power microwave devices.

  1. 1. Silicon Carbide Microwave Devices

    Author : Joakim Eriksson; Chalmers University of Technology; []
    Keywords : SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE

  2. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  3. 3. Development of SiC MESFET Based MMIC Technology

    Author : Mattias Sudow; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high level mixer; spiral inductor; via-hole;

    Abstract : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. READ MORE

  4. 4. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

    Author : Mattias Thorsell; Chalmers University of Technology; []
    Keywords : NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; ENGINEERING AND TECHNOLOGY; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

    Abstract : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. READ MORE

  5. 5. Silicon Carbide Microwave Transistors and Amplifiers

    Author : Rolf Jonsson; Linköpings universitet; []
    Keywords : SiC; MESFET; Physical simulations; Microwave power amplifier; NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Ibis work deals with silicon carbide (SiC) metal semieonduetor field effect transistors (MESFETs) and microwave amplifiers using them. The wide bandgap (WBG) semiconductors silicon carbide and gallium nitride have a large potential for microwave power generation. READ MORE