Search for dissertations about: "hole transport material"
Showing result 6 - 10 of 41 swedish dissertations containing the words hole transport material.
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6. Studies of Charge Transport and Energy Level in Solar Cells Based on Polymer/Fullerene Bulk Heterojunction
Abstract : π-Conjugated polymers have attracted considerable attention since they are potential candidates for various opto-electronic devices such as solar cells, light emitting iodes, photodiodes, and transistors. Electronic de vices based on conjugated polymers can be easily processed at low temperature using inexpensive technologies. READ MORE
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7. Effects of impurities on charge transport in graphene field-effect transistors
Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE
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8. Optical spectroscopy of InGaAs quantum dots
Abstract : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. READ MORE
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9. Experimental Studies of Charge Transport in Single Crystal Diamond Devices
Abstract : Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. READ MORE
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10. Carrier dynamics in blue and green InGaN LED structures
Abstract : This thesis focuses on effects that are critical to achieving high internal quantum efficiency (IQE) in GaN-based light-emitting diodes (LEDs) that emit in a broad spectral range, from violet to green-yellow. These effects include interwell carrier transport in multiple quantum well (QW) structures, lateral transport in the QW plane, and radiative and nonradiative recombination. READ MORE