Search for dissertations about: "igbt kth"
Showing result 1 - 5 of 12 swedish dissertations containing the words igbt kth.
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1. Control and Design Aspects of Components and Systems in High-Voltage Converters for Industrial Applications
Abstract : High-frequency dc-dc converters are widely used in power electronic applications, both in consumer products and industrial products. By operating the converter at higher frequencies both a smaller size and better control characteristics can be obtained. READ MORE
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2. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE
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3. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications
Abstract : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. READ MORE
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4. Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters
Abstract : In order to transition to renewable energy sources and simultaneously meet the increasing demand for electrical energy, highly flexible and efficient grids are required. High-voltage direct-current (HVDC) transmission and grids are foreseen to be a vital part of the future electricity grid. READ MORE
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5. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE