Search for dissertations about: "iii-nitride processing"

Showing result 1 - 5 of 6 swedish dissertations containing the words iii-nitride processing.

2. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Author : Vincent Desmaris; Chalmers University of Technology; []
   Keywords : TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

4. 2. Growth, characterization and processing of III-nitride semiconductors

   Author : Fredrik Fälth; Chalmers University of Technology; []
   Keywords : ;

   Abstract : The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through 3.4 eV (GaN) to 0.65 eV (InN). READ MORE

5. 3. Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

   Author : Elena Alexandra Serban; Ching-Lien Hsiao; Jens Birch; Per Persson; Lars Hultman; Eva Monroy; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The III-nitride semiconductor family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and the related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE

6. 4. Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

   Author : Alexandra Serban; Jens Birch; Ching-Lien Hsiao; Per Ola Åke Persson; Lars Hultman; Kimberly Thelander; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE

7. 5. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

   Author : Björn Hult; Chalmers University of Technology; []
   Keywords : TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

   Abstract : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). READ MORE