Search for dissertations about: "iii-nitrides"

Showing result 1 - 5 of 16 swedish dissertations containing the word iii-nitrides.

  1. 1. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Author : Hyonju Kim; Chalmers University of Technology; []
    Keywords : surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE

  2. 2. Towards Novel AlGaN-Based Light Emitters

    Author : Martin Stattin; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

    Abstract : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. READ MORE

  3. 3. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers University of Technology; []
    Keywords : AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  4. 4. Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect

    Author : Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Stefan Zollner; Linköpings universitet; []

    Abstract : Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE

  5. 5. Electron Energy Loss Spectroscopy of III-Nitride Semiconductors

    Author : Justinas Palisaitis; Per Persson; Lars Hultman; Jens Birch; Ernesto Coronel; Linköpings universitet; []

    Abstract : This Licentiate Thesis covers experimental and theoretical investigations of the bulk plasmon response to different compositions and strain states of group III-nitride materials. Investigated materials were grown using magnetron sputtering epitaxy and metal organic chemical vapour deposition and studied by Rutherford backscattering spectrometry, X-ray diffraction, electron microscopy and electron energy loss spectroscopy (EELS). READ MORE