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Showing result 1 - 5 of 24 swedish dissertations matching the above criteria.
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1. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE
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2. Optical studies of AlN and GaO based nanostructures using Mueller matrix spectroscopic ellipsometry
Abstract : This thesis explores the diverse optical properties manifested when light interacts with various materials, with an emphasis on circular polarization- and bandgaprelated phenomena. The studies in this work are centered around Mueller matrix spectroscopic ellipsometry, with the objective of synthesizing and characterizing nanostructured and high-quality thin films to expand our understanding of the optical properties arising from their underlying structure and electronic transitions, respectively. READ MORE
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3. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE
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4. Towards Novel AlGaN-Based Light Emitters
Abstract : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. READ MORE
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5. Thermal conductivity of wide and ultra-wide bandgap semiconductors
Abstract : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). READ MORE