Search for dissertations about: "iii-nitrides"
Showing result 11 - 15 of 24 swedish dissertations containing the word iii-nitrides.
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11. Elements of AlGaN-Based Light Emitters
Abstract : The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be explored. READ MORE
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12. Transmission Electron Microscopy of Nanowires: Influence of Doping and Etching on Polytypism in InP
Abstract : Semiconductor nanowires have many properties which makes them interesting for future electronic devices. The fact that they have very small diameters allow them to combine different III-V materials into heterostructures, and makes it possible to grow them on Si substrates which are the basis of nearly all current semiconductor technology. READ MORE
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13. Hot-wall MOCVD of N-polar group-III nitride materials
Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE
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14. Simulations of Silicon Carbide Chemical Vapor Deposition
Abstract : Most of the modern electronics technology is based on the semiconducting material silicon. The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon technology to its limits. READ MORE
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15. Growth, characterization and processing of III-nitride semiconductors
Abstract : The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through 3.4 eV (GaN) to 0.65 eV (InN). READ MORE