Search for dissertations about: "inalas"

Showing result 1 - 5 of 16 swedish dissertations containing the word inalas.

  1. 1. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Author : Mikael Malmkvist; Chalmers University of Technology; []
    Keywords : fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. READ MORE

  2. 2. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  3. 3. Heterostructure Field-Effect Transistors for Millimeter Wave Applications

    Author : Christer Karlsson; Chalmers University of Technology; []
    Keywords : ;

    Abstract : This thesis deals with the development of low-noise heterostructure field-effect transistors (HFETs) on III-V materials. The emphasis is on devices for high gain and low noise applications. Fabrication processes have been developed and transistors have been fabricated and characterized. READ MORE

  4. 4. InP HEMT Technology and Applications

    Author : Anders Mellberg; Chalmers University of Technology; []
    Keywords : Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

    Abstract : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. READ MORE

  5. 5. Heterostructure Barrier Varactor Diodes for Frequency Multiplier Applications

    Author : Jan Stake; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor; millimetre- and submillimetre wave power source; Heterostructure Barrier Varactor HBV ; frequency multiplier; varactor diode;

    Abstract : This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Varactor (HBV) diode and its use in frequency multiplier circuits. Different aspects of material structures and frequency multipliers are described. READ MORE