Search for dissertations about: "inas gasb"
Showing result 1 - 5 of 24 swedish dissertations containing the words inas gasb.
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1. Electrical Characterization of Integrated InAs Nano-Structures
Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE
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2. Electrical Characterization of III-V Nanostructure
Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE
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3. Vertical III-V Nanowire Tunnel Field-Effect Transistor
Abstract : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. READ MORE
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4. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE
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5. Theory of electronic structure and transport in heterostructure nanowires
Abstract : Today, semi-conductor nanowires can be grown with very high precision, using epitaxy. This allows for studies of new nanowire-based quantum devices, likely to be part of novel quantum technologies in the future. This thesis concerns nanostructures based on InAs nanowires. READ MORE