Search for dissertations about: "integrated ferroelectric device"
Showing result 1 - 5 of 7 swedish dissertations containing the words integrated ferroelectric device.
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1. Ferroelectric Na₀₅̣ K₀₅̣ NbO₃ varactors for microwave applications
Abstract : .... READ MORE
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2. Ferroelectric Thin Films on Si-substrate for Tunable Microwave Applications
Abstract : The thesis presents the development of microwave tunable devices based onferroelectric thin films. The main tasks in this work are the fabrication, optimization, andintegration of ferroelectric thin film into Si-MMIC. READ MORE
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3. Ferroelectric domain engineering and characterization for photonic applications
Abstract : Lithium niobate (LiNbO3) and KTiOPO4 (KTP) are ferroelectric crystals of considerable interest in different fields of optics and optoelectronics. Due to its large values of the nonlinear optical, electro-optic (EO), piezoelectric and acousto-optical coefficients, LiNbO3 is widely used for laser frequency conversion using the quasiphase matching (QPM) approach where the sign of nonlinearity has been periodically modulated by electric field poling (EFP). READ MORE
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4. Nanophotonic devices in thin film lithium niobate
Abstract : Photonic devices play a fundamental role in today’s society and are a central building blocks for numerous applications, ranging from modern internet to sensing and manufacturing, and photonics is foreseen to be the backbone of future quantum internet and quantum communication systems thanks to the long coherence time of light. At variance with electronic integrated circuits, where silicon has been the material of election for many decades, in the case of photonic integrated circuits (PICs) there are numerous options available for the material substrate. READ MORE
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5. III-V Nanowire MOSFET High-Frequency Technology Platform
Abstract : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. READ MORE