Search for dissertations about: "interface metallization"

Showing result 1 - 5 of 8 swedish dissertations containing the words interface metallization.

  2. 1. Copper and Silver Metallization for High Temperature Applications

    Author : Shabnam Mardani; Shili Zhang; Hans Norström; Jörgen Olsson; Christophe Detavernier Detavernier; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallization; Copper; Silver; Tantalum; High tempreture; Diffussion; Electromigration; Stability;

    Abstract : High-temperature electrical- and morphological-stability of interconnect is critical for electronic systems based on wide band gap (WBG) semiconductors. In this context, the thermal stability of both Ag and Cu films with Ta and TaN films as diffusion barriers and/or surface-capping layers at high temperatures up to 800 oC is investigated in this thesis. READ MORE

  4. 2. Photoemission From Si(100)/Na,K Metallization, Surface Photovoltage and Quantum Well States

    Author : Aref H. Hamawi; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; alkali metal adsorption; photoemission; Si 100 ; interface metallization; semiconductors; valence electrons;

    Abstract : Si(100) covered by Na and K has been studied with photoemission using low photon energies (hw.... READ MORE

  5. 3. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE

  6. 4. Electrical Characterization of Metal-Oxide-Silicon Structures with Ultra Thin Oxide Layers

    Author : Per Lundgren; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; tunneling; MTOS; oxide defects; MOS; PMA;

    Abstract : Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on silicon have been electrically characterized regarding oxide and interface defects and concerning the direct tunnel current through the oxide. This thesis comprises eight papers which deal with the appearance of oxide charge during electrical stress (papers A, D, E), the beneficial effect on the defect density of low-temperature (up to 350 °C) post-metallization annealing (PMA) (paper A, B, C, G), and the effect of temperature and choice of metal for the tunnel current (paper F, H). READ MORE

  7. 5. Interfacial Reactions and Low Cycle Fatigue of Lead-Free Solders for Electronic Packaging

    Author : Peng Sun; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Interfacial Reactions and Low Cycle Fatigue of Lead-Free Solders for Electronic Packaging; Low Cycle Fatigue; Intermetallic Compounds; Lead-Free Solders; Finite Element Simulation;

    Abstract : Two key technologies used by the electronics industry are chip technology and packaging technology. Solder plays a crucial role in both of them. During the last decade, there has been a strong worldwide environmental movement towards lead-free electronic products. READ MORE