Search for dissertations about: "intersubband transition"

Showing result 1 - 5 of 10 swedish dissertations containing the words intersubband transition.

  2. 1. GaN/AlN Multiple Quantum Well Structures

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

  4. 2. Quantum-confined stark effect in different quantum well structures

    Author : Weiquan Chen; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; stark effect; intersubband transition; photoluminescence; interband transitions; modulators; nonparabolicity; exciton; quantum well; oscillator strength; SEED and photodetectors;

    Abstract : .... READ MORE

  5. 3. Gallium nitride templates and its related materials for electronic and photonic devices

    Author : Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Abstract :  .... READ MORE

  6. 4. InGaAs-based quantum dots for infrared imaging applications : growth and characterisation

    Author : Linda Höglund; Per-Olof Holz; Linköpings universitet; []
    Keywords : TECHNOLOGY; TEKNIKVETENSKAP;

    Abstract : In this thesis, results are presented from the development of quantum dot (QD) based infrared photodetectors (IPs). This includes epitaxial growth of QDs, investigations of the structural, optical and electronic properties of the QD based material as well as characterisation of the resulting components. READ MORE

  7. 5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Author : Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

    Abstract : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. READ MORE