Search for dissertations about: "intervalley energy"

Found 3 swedish dissertations containing the words intervalley energy.

  2. 1. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Author : Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Abstract : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. READ MORE

  4. 2. Microscopic Theory of Externally Tunable Exciton Signatures of Two-Dimensional Materials

    Author : Maja Feierabend; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; localized states; density matrix formalism; magnetic field; transition metal dichalcogenides; Bloch equations; organic inorganic heterostructures; dark excitons; strain;

    Abstract : Atomically thin transition metal dichalcogenides (TMDs) are in the focus of current research due to their efficient light-matter interaction and the remarkably strong Coulomb interaction that leads to tightly bound excitons. Due to their unique band structure, TMDs show a variety of bright and optically inaccessible dark excitonic states. READ MORE

  5. 3. Diamond Devices Based on Valley Polarization

    Author : Nattakarn Suntornwipat; Jan Isberg; Markus Gabrysch; Saman Majdi; Hitoshi Umezawa; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CVD diamond; valleytronics; Negative Differential Mobility; NDM; electron polarization; Time-of-Flight; magnetotransport; carrier transport; drift velocity; valley-transistor; Transferred-Electron Oscillator; TEO; TED; Gunn diode;

    Abstract : Diamond is a wide bandgap semiconductor with extreme properties such as high thermal conductivity, high breakdown field, high carrier mobilities and chemical inertness. These properties together with the possibility to synthesize high purity Single-Crystalline (SC) diamond by Chemical Vapor Deposition (CVD), make it a very interesting material and a candidate for use in power electronics and in hazardous environments. READ MORE