Search for dissertations about: "ion-implantation"

Showing result 1 - 5 of 25 swedish dissertations containing the word ion-implantation.

2. 1. Hydrogen diffusion and ion implantation in silicon carbide

   Author : Martin Janson; KTH; []
   Keywords : heat abd tgernidtbanucs; electronics and electrical; materials science;

   Abstract : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. READ MORE

4. 2. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation

   Author : Thawatchart Chulapakorn; Anders Hallén; Daniel Primetzhofer; Yanwen Zhang; Uppsala universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon nanoparticle; Photoluminescence; Ion beam synthesis; Ion beam analysis; Fysik; Physics;

   Abstract : Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. READ MORE

5. 3. Zinc Oxide Bulk and Nanorods

   Author : Peter Klason; Göteborgs universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; zinc oxide; Schottky contact; buckling; annealing; semiconductor growth; ion implantation; photoluminescence; nanorods;

   Abstract : Zinc Oxide (ZnO) has many promising properties for optoelectronics, sensor applications, transparent electronics etc. To mention a few, ZnO has a large exciton binding energy (60 meV at room temperature) and a direct wide bandgap energy of 3.37 eV. In addition, ZnO is piezoelectric and shows more resistance to radiation damage than Si and GaN. READ MORE

6. 4. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

   Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE

7. 5. Low and High Energy Ion Beams in Nanotechnology

   Author : Thomas Winzell; Kärnfysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; ion implantation; magnetic materials; ERDA; nanometer structures; Nuclear physics; MeV Ions; lithography; Kärnfysik; Fysicumarkivet A:2000:Winzell;

   Abstract : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. READ MORE