Search for dissertations about: "limits to growth"
Showing result 21 - 25 of 159 swedish dissertations containing the words limits to growth.
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21. Exploitation of interactions with the neonatal Fc receptor to manipulate biological half-lives for therapeutic applications
Abstract : Protein engineering provides powerful tools to create useful proteins with desired properties. In this thesis, rational design principles have been used for development of fusion proteins that can interact with the neonatal Fc receptor (FcRn) for potential medical applications. FcRn is widely expressed in the human body. READ MORE
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22. Structural investigation and lateral growth of silicon carbide crystals
Abstract : Today, most of the electronic device technology is based on Si as a semiconducting material. The demands from the industry of improved performance within smaller devices drives the silicon based devices to the limits imposed by nature and not by technology. To realize these demands new materials like silicon carbide (SiC) must be investigated. READ MORE
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23. Understanding and Optimization of III-V nanowire growth in Aerotaxy
Abstract : III-V semiconductor nanowires are high aspect ratio nanostructures with superior properties that can potentially enhance the functionality of next-generation opto-electronic devices. At present, the most reliable method for fabricating III-V semiconductor nanowires is the particle-assisted vapor-liquid-solid growth using a substrate-based growth process. READ MORE
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24. Climate change time machine : Adaptation to 30 years of warming in the Baltic Sea
Abstract : Earth mean surface temperature has increased by 1 °C since the industrial revolution, and this has already had considerable effects on animal and plant species. Ecological responses to the warming climate – often facilitated via phenotypic plasticity – are ubiquitous. READ MORE
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25. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE