Search for dissertations about: "low noise amplifier"

Showing result 1 - 5 of 81 swedish dissertations containing the words low noise amplifier.

  2. 1. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization

    Author : Erik Sundin; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; shot-noise; low noise amplifier; cryogenic amplifier; sis; noise measurement; HEMT;

    Abstract : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. READ MORE

  4. 2. Cryogenic low noise amplifiers for microwave frequencies

    Author : Jianguo Xu; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; cryogenic; millimeter-wave; low-noise amplifier; FET noise model; microwave; TEGFET; HEMT; noise measurement; HFET; computer-aided design;

    Abstract : .... READ MORE

  5. 3. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Author : Pirooz Chehrenegar; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Abstract : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. READ MORE

  6. 4. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE

  7. 5. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers

    Author : Junjie Li; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Channel noise; InP HEMT; cryogenic; subthreshold swing.; noise temperature; spacer thickness; low-noise amplifier;

    Abstract : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. READ MORE